Frequency fluctuations in mono- and polysilicon resonators: A new limit of detection

摘要

It has been recently shown that resonance frequency fluctuations degrade the limit-of-detection of high-purity monocrystalline resonating sensors. A thorough literature study has shown this is likely the case for a wide variety of resonators. Here we provide additional insight into the physical source of these fluctuations: our results suggest that defect motion in the crystalline structure of the material is not a major source of frequency fluctuations in silicon resonators.