A 20–30 GHz high efficiency power amplifier IC with an adaptive bias circuit in 130-nm SiGe BiCMOS

摘要

A high efficiency broadband power amplifier IC is proposed for wireless communication systems. The power amplifier IC integrates an adaptive bias circuit which can adjust the collector current of SiGe HBT under large signal operation to improve the efficiency and temperature performance. The power amplifier IC is designed, fabricated and fully measured in 130-nm SiGe BiCMOS. The fabricated power amplifier IC has exhibited an output power of 14.6 dBm with a PAE of 43.8 % at a supply voltage of 1.4 V at 26 GHz. In addition, the power amplifier IC has an output power of over 12 dBm with a PAE of over 31.1 % from 20 to 30 GHz.