A Novel device for low noise amplification in 130nm high resistivity RFSOI technology platform

摘要

CMOS Silicon on Insulator (SOI) is now the technology of choice for RF switches in front end module systems. The emergence of 4G cellular systems with carrier aggregation has made the design of front end modules more complex. To take into account the diversity paths now required in cellular systems the low noise amplifiers (LNAs's) are being integrated in the front end module along with the switches. This paper describes novel low noise amplifier devices in high resistivity SOI targeted for integration and use in RF front end modules.