Flexible Si BiCMOS on plastic substrates

摘要

In this work, we have demonstrated flexible BiCMOS devices on transferable single crystalline Si nanomembrane (Si NM), including n-channel and p-channel metal-oxide semiconductor field-effect transistors (NMOS & PMOS FETs) and NPN bipolar transistors (BJTs). All types of devices that were successfully integrated into Si NM demonstrated excellent DC and radio-frequency (RF) characteristics and performed a stable transconductance and a current gain under the bending condition. Overall, Si NM based flexible BiCMOS devices offer great promises for high-performance and multi-functional future flexible applications. Moreover, a flexible BiCMOS process we proposed has a good compatibility with commercial microfabrication technology and thus it is easy to adapt to industrial usage.