In this paper, simulation of non-radiative recombination heating and Joule heating effects based on different material of a light emitting diodes chip for Gallium Nitride, Indium Nitride, Zinc Oxide, Zinc Selenide and Titanium Dioxide are demonstrated. Among the light emitting diodes chips materials, Indium Nitride, Zinc Oxide and Zinc Selenide has the capability to produce the highest non-radiative recombination heating which the heating value is potential up to ×10~(12) to ×10~(13) W/m~3. Meanwhile, Titanium Dioxide has the capability to generate higher value of non-radiative recombination heating with lowest value of electron carriers concentration. For the joule heating effect, the Titanium Dioxide shows the fast heating behavior as compared with other materials.
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