Enhancement of Avalanche Noise in IMPATT Diodes due to E-E and H-H Collisions

摘要

The effect of energy-loss due to electron-electron (e-e) and hole-hole (h-h) collisions on the avalanche noise performance of IMPATT diodes has been studied. Simulations have been carried out on DDR Si IMPATTs operating at 94, 140 and 220 GHz. Simulation results show that the noise measure of the diodes considerably increases due to e-e and h-h interactions within the space charge layer of the device. This is observed to be more influential at higher mm-wave frequencies.