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Analysis of Electronic Properties of Different Configurations of CNTS with Undoped and Doped Atom

机译:未掺杂和掺杂原子的CNT不同配置的电子性质分析

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In this paper three types of carbon nanotubes, namely, zigzag (n, 0), armchair (n=m), and chiral (n, m) are investigated with and without doping using simulation technique. The electronic properties like band structure and density of states of these three configurations with different values of n and m vectors are analysed and compared using Atomistix Toolkit (ATK) software. When the band structures of the designed configurations, reported in this paper are compared, it is observed that when the value of (n-m) vector is divisible by three, the CNTs behave as metals, otherwise they behave as semiconductors. The density of states of carbon nanotubes depicts the energy gap around the Fermi level. For the tube with chiral chirality, density of states is zero near the Fermi level, for semiconductor behaviour there is small gap in density of states near Fermi level and gap increases as the behaviour changes to insulator.
机译:本文在三种类型的碳纳米管中,即Z字形(n,0),扶手椅(n = m)和手性(n,m),并在不使用模拟技术的情况下进行研究。通过ATOMISTIX Toolkit(ATK)软件分析并使用具有不同N和M vectors的不同值的这三种配置的带有不同值的带状的电子特性和浓度。当比较设计配置的设计配置的带状时,观察到当(N-M)载体的值被三个被三个定位时,CNT表现为金属,否则它们表现为半导体。碳纳米管的状态的密度描绘了费米水平周围的能隙。对于具有手性手性的管,状态的密度靠近费米水平,对于半导体行为,在FERMI水平附近的状态下的状态下存在小的间隙,随着行为变化到绝缘体的差距增加。

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