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Fabrication of Poly (methyl methacrylate) and Poly(vinyl alcohol) Thin Film Capacitors on Flexible Substrates

机译:在柔性基板上的聚(甲基丙烯酸甲酯)和聚(乙烯醇)薄膜电容器的制备

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Flexible electronics is becoming more popular with introduction of more and more organic conducting materials and processes for making thin films. The use of polymers as gate dielectric has over ruled the usage of conventional inorganic oxides in Organic Thin Film Transistors (OTFTs) on account of its solution process ability and ease of making highly insulating thin film. In this work Capacitance is fabricated with polymeric dielectrics namely poly (methyl methacrylate) - PMMA and poly (vinyl alcohol) - PVA. The electrodes used for these capacitors are Indium Tin Oxide (ITO) and Aluminium. Capacitance value of 9.5nF/cm2 and 33.12nF/cm2 is achieved for thickness of 510 nm of PMMA and 80 nm of PVA respectively. This study on capacitance can be used for assessing the suitability of these polymers as gate insulators in OTFTs.
机译:灵活的电子设备与引入越来越多的有机导电材料和制造薄膜的工艺变得越来越受欢迎。 由于其溶液工艺能力和易于制造高绝缘薄膜,使用聚合物作为栅极电介质的使用已经过度统治了有机薄膜晶体管(OTFTS)中的常规无机氧化物。 在该工作中,用聚合物电介质制造电容,即聚(甲基丙烯酸甲酯) - PMMA和聚(乙烯醇) - PVA。 用于这些电容器的电极是氧化铟锡(ITO)和铝。 电容值9.5NF / cm2和33.12NF / cm2分别实现510nm的PMMA和80nm的PVA厚度。 该研究的电容研究可用于评估这些聚合物作为OTFTS中的栅极绝缘体的适用性。

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