The Effect of the Sol-gel Spincoathig Deposition Technique on the Memristive Behaviour of ZnO-based Memristive Device

摘要

This paper presents the memristive behavior of zinc oxide thin films deposited on ITO substrate by sol-gel spin coating technique. The spin coating speed was varied from 1000 rpm to 5000 rpm to study the effect it has on the memristive device fabricated. The electrical properties were characterized by using a two-point probe IV (current-voltage) measurement system (Keithley 2400). The thicknesses of the thin films were measured by Veeco Dektak 150 Surface Profiler and it shows that the thickness decreased with the spin coat speed. The lowest thickness was obtained from thin film deposited at 5000rpm which is 17.47 nm. The highest resistance Roff/Ron ratio was obtained from thin film spin coated at 3000 rpm which is 1.346 with visible ZnO nanoparticle characterized by FESEM (JEOL JSM 670 IF). This indicated that the optimum spin coat speed for the zinc oxide-based memristive device is 3000 rpm as it exhibited the best switching behavior.