Single and double oxidations in a 980 nm VCSEL - impact on certain electrical and optical properties

摘要

In this paper we present the simulation results of an oxide-confined, InGaAs/GaAs based vertical-cavity surface-emitting laser with three different configurations of the oxide apertures. We analyze the impact of the number and position of oxide layers on the carrier distribution in the laser's active region, distribution of the optical modes, and modulation properties.