Approximations for analytical relations of the darck diffusion and recombination current

摘要

The effects of temperature on the characteristic n~+-p junction solar cells are investigated theoretically. The analytical resolution of continuity equations in each region of a crystalline solar cell, including the intrinsic carrier concentration and the thickness of space charge layer as function of temperature, allowed us to determine the expressions of diffusion and recombination dark currents. From the expressions of such currents and using the necessary approximations, we propose new relationships giving the expressions of these currents as a function of their reference values which are determined from both the data provided by the manufacturer and the different temperature values. In this paper, we aim to demonstrate and to validate the approximations.