A CWDM photoreceiver module for 10 Gb/s × 4ch interconnection based on a vertical-illumination-type Ge-on-Si photodetectors and a silica-based AWG

摘要

We report a 40 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetectors and a silica-based AWG demultiplexer by employing 4-channel CWDM. The 60um-diameter Ge-on-Si photodetector arrays, grown on a bulk silicon wafer by RPCVD and fabricated with CMOS-compatible process, have ～0.9 AAV responsivity with 13 GHz bandwidth at λ ～ 1330nm. Ge-on-Si photodetector arrays are hybrid-integrated with TIA/LAs and directly-coupled to the AWG. The low-cost FPCB-package based photoreceiver module shows 10.3 Gb/s × 4-channel interconnection with -11 ～ -12.2 dBm sensitivity at a BER = 10~(-12).