Dip-Coating of Patterned Organic Semiconductor Films

摘要

Dip-coating is a conventional solution processing technology to prepare large-area films at a low cost and with cheap facilities. For semiconductor film processing, crystal orientation and thickness uniformity are the primary factors that determine the film quality and its electrical performance. These requirements are readily satisfied with the dip-coating method because the film morphology can be effectively optimized by tuning the withdrawal speed. This work optimizes the withdrawal speed for the dip-coating of patterned semiconductor films of 400×500μm~2 as well as that for film dip-coating on the whole surfaces of the substrate. For both experiment, optimized electrical mobility is achieved at the same withdrawal speed, however, the random crystal orientation of the patterned films causes a remarkable decrease in device performance.