Dialkyldiselenophosphinato-metal complexes - a new class of single source precursors for deposition of metal selenide thin films and nanoparticles

摘要

We report here a new synthetic approach for convenient and high yield synthesis of dialkyldiselenophosphinato-metal complexes. A number of diphenyldiselenophosphinato-metal as well as diisopropyldiselenophosphinato-metal complexes have been synthesized and used as precursors for deposition of semiconductor thin films and nanoparticles. Cubic Cu_(2-x)Se and tetragonal CuInSe_2 thin films have been deposited by AACVD at 400, 450 and 500°C whereas cubic PbSe and tetragonal CZTSe thin films have been deposited through doctor blade method followed by annealing. SEM investigations revealed significant differences in morphology of the films deposited at different temperatures. Preparation of Cu_(2-x)Se and In_2Se_3 nanoparticles using diisopropyldiselenophosphinato-metal precursors has been carried out by colloidal method in HDA/TOP system. Cu_(2-x)Se nanoparticles (grown at 250°C) and In_2Se_3 nanoparticles (grown at 270°C) have a mean diameter of 5.0 ± 1.2 nm and 13 ± 2.5 nm, respectively.