THEORETICAL ASPECTS ON PUSHING AND ENGULFMENT OF SiC PARTICLES DURING DIRECTIONAL SOLIDIFICATION EXPERIMENTS WITH MOLTEN SILICON

摘要

The directional solidification method is routinely used to produce polycrystalline silicon, an important material for the photovoltaic (PV) industry. The form of the solid-liquid interface during solidification has considerable influence on the material quality. The dissolved impurities and the solid inclusions above the solidification front affect the interface and may cause interface breakdown. We investigate the effects of pushing and engulfment of silicon carbide (SiC) particles by the solidification front during directional solidification of silicon. We employ a 12kg directional-crystallization furnace to cast the molten silicon. We use upgraded metallurgical grade silicon with low concentrations of metallic impurities (＜ 5ppm) and a high content of carbon (700 ppm) present as SiC particles. Samples from the cast polycrystalline silicon ingots are investigated by light microscope. The expected interaction of impurities with the solidification front is investigated theoretically using empirical models. The data obtained from the models are in good agreement with the experimental results.