Effects of Gel2 or ZnI_2 addition to perovskite CH_3NH_3PbI_3 photovoltaic devices

摘要

CH_3NH_3PbI_3 added with GeI_2 or ZnI_2 perovskite photovoltaic devices were fabricated characterized. The surface coverages of the perovskite layers were improved by the addition of GeI_2 or ZnI_2. Formation of PbI_2 observed for the pristine CH_3NH_3PbI_3 was suppressed by the GeI_2 or ZnI_2 addition, which resulted in the improvement of the conversion efficiencies of the perovskite photovoltaic devices.