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The Effect of Changing the Vapor Flux on Physical Properties of Nanocrystaline CdTe Thin Film, Prepared by Thermal Evaporation Method

机译:通过热蒸发方法制备的纳米晶体CdTe薄膜物理性质改变蒸汽通量的效果

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In the present investigation, seven Cadmium Telluride (CdTe) thin films with thickness of 350nm have been prepared by vacuum thermal evaporation technique. One of them was deposited by conventional vacuum thermal evaporation technique, while six others were deposited with applying a novel vapor (low controlling system. Placing this equipment in the way of vapor flux from the source to the substrate cut the depositing flux of vapor periodically and can change the way of vapor flux. It led to considerable change of optical properties, nanocrystalline structure, and also stochiometery of the thin films. All the samples showed nanocrystalline structure. A considerable increase in absorption coefficient was observed at 520nm wavelength of light, from 5.5×10~4 cm~(-1) for the sample prepared with conventional vacuum thermal evaporation technique to 9.8×10~4 cm~(-1) for a sample which prepared by applying mentioned equipment. The most considerable change in the bandgap, grain size and Te/Cd ratio were 1.54 eV to 1.66 eV, 40nm to 15nm, and 56/44 to 60/40 respectively. The optical parameters such as absorption coefficient, bandgap, refractive index, and structural parameters such as texture coefficient, preferential orientation factor and crystallite size of samples were obtained. Also ED AX and FESEM result of samples were compared with each other in this study.
机译:在本研究中,通过真空热蒸发技术制备了厚度为350nm的七个碲化镉(CdTe)薄膜。其中一个通过常规真空热蒸发技术沉积,而六种其他蒸汽(低控制系统)沉积了其他六种。将该设备从源从源到基板的蒸汽通量放置,周期性地切割蒸汽的沉积通量可以改变蒸汽通量的方式。它导致光学性质,纳米晶体结构的相当大变化,以及薄膜的表现计。所有样品都显示出纳米晶体结构。在520nm波长的光下观察到吸收系数相当大的增加,来自5.5×10〜4cm〜(-1)用于用常规真空热蒸发技术制备的样品为9.8×10〜4cm〜(-1),用于通过应用提到的设备制备的样品。带隙最相当大的变化,粒度和TE / CD比率分别为1.54eV至1.66eV,40nm至15nm,分别为56/44至60/40。光学参数,如吸收系数,带隙,屈光图标X和结构参数如纹理系数,优先取向因子和样品的微晶尺寸。在本研究中,ED AX和样品的eSEM结果相互比较。

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