Finite Element Simulation of A Novel Nano 3D Semiconductor Detector Fabricated By Anodizing the Aluminium

摘要

The unique geometry of micro 3D semiconductor detectors, presents several advantages over conventional planar silicon detectors. But, manufacturing these kind of detectors requires high technology. The novel idea to achieve a high performance and low cost semiconductor detector is using the nano pattern of anodized aluminium as a mask to create nano 3D detectors. The simulation results show that this novel nano 3D radiation hard semiconductor detector with collection time less than 10 ps and full depletion voltage less than one volt can become increasingly important for possible future upgrades of 3D detectors of the Large Hadron Collider (LHC) at CERN and also medical imaging applications.