Experimental Study of Two-dimensional Quantum Wigner Solid in Zero Magnetic Field

摘要

At temperatures T → 0, strongly interacting two-dimensional (2D) electron systems manifest characteristic insulating behaviors that are key for understanding the nature of the ground state in light of the interplay between disorder and electron-electron interaction. In contrast to the hopping conductance demonstrated in the insulating side of the metalto- insulator transition, the ultra-high quality 2D systems exhibit nonactivated T-dependence of the conductivity even for dilute carrier concentrations down to 7×10~8 cm~(-2). The apparent metal-to-insulator transition (MIT) occurs for a large r_s value around 40 for which a Wigner Crystalllization is expected. The magnetoresistance for a series of carrier densities in the vicinity of the transition exhibits a characteristic sign change in weak perpendicular magnetic field. Within the Wigner Crystallization regime (with r_s >40), we report an experimental observation of a characteristic nonlinear threshold behavior from a high-resolution dc dynamical response as an evidence for aWigner crystallization in high-purity GaAs 2D hole systems in zero magnetic field. The system under an increasing current drive exhibits voltage oscillations with negative differential resistance. They confirm the coexistence of a moving crystal along with striped edge states as observed for electrons on helium surfaces. Moreover, the threshold is well below the typical classical levels due to a different pinning and depinning mechanism that is possibly related to quantum processes.