Increased Charge Storage Capacity of Titanium Nitride Electrodes by Deposition of Boron-doped Nanocrystalline Diamond Films

摘要

The aim of this study was to investigate the feasibility of depositing a thin layer of boron-doped nanocrys-talline diamond (B-NCD) on titanium nitride (TiN) coated electrodes and the effect this has on charge injection properties. The charge storage capacity increased by applying the B-NCD film, due to the wide potential window typical for B-NCD. The impedance magnitude was higher and the pulsing capacitance lower for B-NCD compared to TiN. Due to the wide potential window, however, a higher amount of charge can be injected without reaching unsafe potentials with the B-NCD coating. The production parameters for TiN and B-NCD are critical, as they influence the pore resistance and thereby the surface area available for pulsing.