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Preface

机译:前言

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This issue of ECS Transactions is a collection of papers presented at the Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies 3, held in San Francisco, CA from October 28-31, 2013 as part of the ECS Fall 2013 Meeting. The First Symposium in this series was held in Boston, MA as an integral part of the ECS Fall 2011 Meeting; the Second Symposium was held in Honolulu, Hawaii as part of the ECS Fall 2012 Meeting; both events were indeed grand successes. This new Symposium was founded with a goal to encourage and promote vigorous scientific and technical interactions on a wide range of wide bandgap (WBG) power technology topics from materials to systems. Such an interaction is essential in order to reduce the overall cost and improve performance, and develop power systems that last in the field for a prescribed period of time. Furthermore, as power electronics in the coming years is expected to benefit from a complex interplay of silicon, GaN and SiC technologies it is of outmost importance to understand development, merits and limitations of all three technologies.
机译:ECS交易问题是在2013年10月28日至31年10月28日至31年10月28日至31年的旧金山举行的氮化镓(GaN)和碳化硅(SiC)电力技术3上举办的一篇论文的集合。会议。本系列的第一个研讨会是在波士顿举行的,硕士成为ECS 2011年ECS秋季会议的一个组成部分;第二个研讨会是在夏威夷檀香山举行的,作为ECS秋季2012年会议的一部分;这两个事件都确实是盛大的成功。这项新研讨会成立于目标,以鼓励和推动从材料到系统的广泛宽带隙(WBG)电力技术主题的充满活力的科技互动。这种互动对于降低整体成本和改进性能至关重要,以及开发在现场持续规定的时间的电力系统。此外,随着未来几年的电力电子设备预计将受益于硅,GaN和SIC技术的复杂相互作用,了解所有三种技术的发展,优点和局限性的重要性。

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