Approach for a simplified fabrication process for IBC-SHJ solar cells with high fill factors

摘要

In this paper, interdigitated back contacted silicon heterojunction (IBC-SHJ) solar cell results as well as two dimensional device simulations are presented. The simulation indicates that for the minority contact (emitter) the coverage of the metallisation should be nearly 100 %, while this is less critical for the majority contact (BSF). We present experimental results for an IBC-SHJ solar cell with a metallisation fraction of 100 % for the emitter and approximately 65 % for the BSF, with a high fill factor of 77.7 % and an independently confirmed energy conversion efficiency of 19.4 %.