Thermoelectric elements made of semiconductor plates laminated with a highly electrically and thermally conducting inter-connector with a flow channel configuration can be treated as integrated Thermoelectric Device (TED). Elements with constructed bulk crystalline n-type and p-type (Bismuth-Telluride-Selenium) semiconducting materials and copper as a conducting material are considered. In this study, the thermoelectric performance of such an element using fluid-thermo-electric coupled field numerical methods has been investigated. The TED is subjected to constant cold temperature at the bottom and top surfaces while the inter-connector channel walls are exposed to hot fluid flow; the remaining surfaces are kept adiabatic. The performance of the integrated TED element is studied in terms of power output P0, heat input Q_h, conversion efficiency η and produced electric voltage V for different load resistances R_L, inlet hot fluid temperatures T_(in) and flow rates Re_(Dh) .
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