Metal-Semiconductor-Metal directly illuminated electron detector and secondary electron detector with metal nano-rod array and trench structure to enhance the performance

摘要

In this work, we first fabricated the conventional metal-semiconductor-metal (MSM) interdigitated electron detector with aluminum contact as the control group, then used e-beam lithography system and reactive ion etcher (RIE) to fabricate aluminum nano-rod array structure on the contact area and used RIE to fabricate the periodic rectangle trench in the active area of the electron detector as another MSM interdigitated electron detector at the same time as the experimental group. According to the experimental data, we found that the MSM electron detectors with aluminum nano-rod array and periodic trench structure had better electricity characteristic and performance as directly illuminated and secondary electron detector.