We report results of the study of the low-frequency noise in thin films of bismuth selenide topological insulators, which were mechanically exfoliated from bulk crystals via "graphene-like" procedures. From the resistance dependence on the film thickness, it was established that the surface conduction contributions to electron transport were dominant. It was found that the current fluctuations have the noise spectral density S_1∞ 1/f(where/is the frequency) for the frequency range up to 10 kHz. The obtained noise data are important for transport experiments with topological insulators and for any proposed device applications of these materials.
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