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Kinetics analysis of direct nitridation of silicon powders at atmospheric pressure

机译:大气压下硅粉末直接氮化的动力学分析

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Silicon nitride powders were prepared via direct nitridation of silicon powders diluted with α-Si_3N_4 at atmospheric pressure. The nitridation temperature and time were ranged from 1623K to 1823K and from 0 minute to 20 minutes respectively. Based on the relations between the conversion rate of silicon and the time at different temperatures, and using shrinking core model, a simple model for the reaction between silicon and nitrogen was derived. The model showed that the relations between the conversion rate of silicon and the time displayed asymptotic exponential conversion trend. Using this model, the kinetics parameters of nitridation of silicon powder at atmospheric pressure were calculated, including pre-exponential factor in Arrhenius equation, activation energy, effective diffusion coefficient, and the formula of the reaction rate constant.
机译:通过在大气压下用α-Si_3N_4稀释的硅粉的直接氮化制备氮化硅粉末。氮化温度和时间分别为1623k至1823k,分别为0分钟至20分钟。基于硅的转化率与不同温度的时间之间的关系,并使用缩小核心模型,衍生硅和氮之间的简单模型。该模型表明,硅的转换率与时间的关系显示渐近指数转换趋势。使用该模型,计算了大气压下硅粉氮化的动力学参数,包括Arhenius方程的预指数因子,激活能量,有效扩散系数和反应速率恒定的公式。

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