Comparison of the Impact of Thermal Treatments on the Second and on the Millisecond Scales on the Precipitation of Interstitial Oxygen

摘要

The precipitation of oxygen was investigated after rapid thermal annealing pre-treatments for 30 s in the range 1100-1250 °C and after flash lamp annealing for 3 ms and 20ms with different irradiances up to melting of the wafer surface. The difference between thermal processing on the second and on the millisecond scales is based on the temperature profiles generated by the different types of processing. These profiles influence the shrinking of grown-in oxide precipitate nuclei and the generation, diffusion, and annihilation of intrinsic point defects and thus the oxygen precipitation during further processing. Oxygen precipitation can be suppressed by flash anneals or bulk defect zones and defect denuded zones for internal gettering can be created both depending on the flash duration and energy density.