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A Novel Delay Minimization Technique for Low LeakageWide Fan-In Domino Logic Gates

机译:一种新型延迟最小化技术在Domino逻辑门下的低泄漏粉丝

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With the scaling of technology the magnitude of leakage current has become a major cause of concern as it reduces the robustness of the circuit and leads to wastage of power. Most of the methods of leakage reduction lead to an increase in the delay of the circuit. In this paper a delay minimization block is proposed. This block is incorporated in a domino gate which has high threshold transistors for leakage reduction. The delay of high threshold domino gates has been reduced by using this mechanism. This facilitates the placement of high threshold domino gates in the critical or near critical paths of a design. Delay reduction of about 10% is achieved without any penalty on power delay productwhen wide fan-in domino gate has leakage as well as delay reduction features as compared to wide fan-in domino gates with only leakage reduction mechanisms. Simulations at 500MHz in 90nm show that leakage has reduced by 50% in the proposed design as compared to the conventional wide fan-in domino gate.
机译:随着技术的缩放,漏电流的幅度已成为关注的主要原因,因为它降低了电路的稳健性并导致功率的浪费。大多数泄漏减少方法导致电路延迟的增加。在本文中,提出了一种延迟最小化块。该块结合在Domino栅极中,其具有高阈值晶体管,用于泄漏。通过使用这种机制已经减少了高阈值多米诺盖茨的延迟。这有助于在设计的临界或近乎关键路径中放置高阈值Domino栅极。延迟减少约10%而在电力延迟产品上宽敞的Domino栅极具有泄漏以及延迟减少特征,与宽敞的Domino栅极相比只有泄漏减少机构。 90nm中500MHz的模拟表明,与传统的宽扇形Domino栅极相比,泄漏在拟议的设计中减少了50%。

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