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High-Order Harmonic Photoelectron Spectroscopy System towards Measuring Attosecond Electron Dynamics on Solid Surfaces

机译:高阶谐波光电子体光谱系统测量固体表面上的Attosecond电子动力学

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With the aim of tracking the motion of electrons on semiconductor surfaces on an attosecond timescale, we have developed a femtosecond time-resolved surface photoelectron spectroscopy (PES) system based on a 59th harmonic pulse source, and a 90-eV high-order harmonic pulse source using a few-cycle carrier-envelope phase (CEP) stabilized laser pulse. We used this surface PES system to measure the time evolution of the surface photovoltage effect on GaAs(0 0 1). We observed an energy shift of about 200 meV of a 3d-core level photoelectron peak towards a higher binding energy. This suggests that the surface potential changed owing to the spatial separation of the electron-hole pair that was generated by laser irradiation. Our observation of the CEP dependence of the harmonic spectrum generated by the CEP-stabilized few-cycle pulse indicates that this source has the potential to produce an attosecond EUV pulse.
机译:目的是,在Attosecond Timescale上跟踪电子半导体表面上的运动,我们开发了基于第59次谐波脉冲源的飞秒时间分辨表面光电子能谱(PES)系统,以及90 ev高阶谐波脉冲源使用几个周期载波包络相(CEP)稳定激光脉冲。我们使用这种表面PES系统来测量GaAs上表面光电效应的时间演变(0 0 1)。我们观察到3D核心水平光电子峰值朝向更高的绑定能量的3D核水平光电子峰值的能量移位。这表明表面电位由于激光照射产生的电子 - 空穴对的空间分离而变化。我们观察CEP稳定的少循环脉冲产生的谐波谱的CEP依赖性表明该源具有产生attosecond EUV脉冲的可能性。

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