Broadband Gallium Nitride (GaN) Power Amplifiers

摘要

Broadband Gallium Nitride (GaN) power amplifiers (PAs) capable of delivering 100 Watts of continuous power from 225 MHz to 2 GHz are reported using GaN power transistors fabricated with 0.5 micron GaN-on-SiC foundry process. The measured third-order intermodulation distortion (IMD3) signal amplitude is below -28 dBc. The power amplifier design employs two 50 Watt amplifiers combined using baluns to match to 50 ohm load, and is constructed on a hydrocarbon ceramic laminated printed circuit board (PCB) for optimum broadband perfonnance. Further improvement in amplifier performance is feasible by employing improved device design, packaging and thermal management. This GaN power transistor is rated at 120 Watts, 11 dB gain at 2 GHz, and with a typical drain efficiency of 65%.