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Propagation of Delay Faults Caused by Resistive Open Faults with Dynamic Voltage Scaling Awareness

机译:电阻打开故障引起的延迟故障传播动态电压缩放意识

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Fault Diagnosis is important step in detecting manufacturing process problems and improving its quality. Characterizing the effect of faults on the performance of circuits is essential in diagnosing and testing faulty chips. Resistive opens are common manufacturing faults which affect the timing performance of circuits. In dynamic voltage scaling environment, the supply voltage and clock frequency are dynamically adjusted to meet the processing demands. With this awareness, we previously demonstrated that the delay caused by resistive opens as the V_(DD) increases show different increment and decrement patterns depending on the range of the open resistance value. However, the path delay in CMOS circuits increases exponentially with reduced V_(DD). In this work, we investigate how the delay of the opens is propagated through the CMOS circuit. We show how this behavior is manifested with the aid of simulation on benchmark circuits based on 130nm technology model as well as 65nm, 22nm and 16nm Berkeley Predictive Technology Models (BPTM). Based on this observation and to ease fault related work on resistive open faults, we proposed dividing the full range of opens resistances into smaller subsets of resistance intervals.
机译:故障诊断是检测制造过程问题并提高其质量的重要步骤。表征故障对电路性能的影响对于诊断和测试故障芯片是必不可少的。电阻打开是常见的制造故障,影响电路的定时性能。在动态电压缩放环境中,动态调整电源电压和时钟频率以满足处理需求。通过这种意识,我们之前证明由电阻导致的延迟随着V_(DD)增加而显示不同的增量和减量图案,这取决于开路电阻值的范围。然而,CMOS电路中的路径延迟随着V_(DD)的减小而呈指数级增长。在这项工作中,我们调查了如何通过CMOS电路传播打开的延迟。我们展示了基于130nm技术模型的基准电路的仿真以及65nm,22nm和16nm Berkeley预测技术模型(BPTM)借助于基于基准电路的仿真表现出这种行为。基于该观察和容易出现相关工作的电阻开放故障,我们提出将全范围的电阻分为较小的电阻间隔子集。

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