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Propagation of delay faults caused by resistive open faults with dynamic voltage scaling awareness

机译:具有动态电压定标感知的电阻性开路故障引起的延迟故障的传播

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Fault Diagnosis is important step in detecting manufacturing process problems and improving its quality. Characterizing the effect of faults on the performance of circuits is essential in diagnosing and testing faulty chips. Resistive opens are common manufacturing faults which affect the timing performance of circuits. In dynamic voltage scaling environment, the supply voltage and clock frequency are dynamically adjusted to meet the processing demands. With this awareness, we previously demonstrated that the delay caused by resistive opens as the VDD increases show different increment and decrement patterns depending on the range of the open resistance value. However, the path delay in CMOS circuits increases exponentially with reduced VDD. In this work, we investigate how the delay of the opens is propagated through the CMOS circuit. We show how this behavior is manifested with the aid of simulation on benchmark circuits based on 130nm technology model as well as 65nm, 22nm and 16nm Berkeley Predictive Technology Models (BPTM). Based on this observation and to ease fault related work on resistive open faults, we proposed dividing the full range of opens resistances into smaller subsets of resistance intervals.
机译:故障诊断是检测制造过程中的问题并提高其质量的重要步骤。表征故障对电路性能的影响对于诊断和测试有故障的芯片至关重要。电阻开路是常见的制造故障,会影响电路的时序性能。在动态电压缩放环境中,可以动态调整电源电压和时钟频率以满足处理需求。有了这种认识,我们以前证明了随着V DD 的增加,由电阻性开路引起的延迟根据开路电阻值的范围显示出不同的增量和减量模式。但是,CMOS电路的路径延迟随着V DD 的减小而呈指数增长。在这项工作中,我们研究了打开延迟如何通过CMOS电路传播。我们将借助基于130nm技术模型以及65nm,22nm和16nm伯克利预测技术模型(BPTM)的基准电路进行仿真,展示这种行为是如何体现的。基于此观察结果,为了简化与电阻性开断有关的故障工作,我们建议将开路电阻的整个范围划分为较小的电阻间隔子集。

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