Modelling Of the Behaviour of Solar Cell under High Injection Effect Conditions

摘要

An I-V characteristic measurements of silicon solar cell were carried out, the result showed a saturation of open circuit voltage V_(oc) when sunlight concentration reaches 7 suns in our case, which imposed a limitation on the solar cell's efficiency. For understanding the carrier's transport mechanisms in the cell, a simulation of solar cell behaviour under sunlight concentrating -up to 25 suns- has been carried out. The minority carrier concentration profiles in the silicon solar cell's base were represented, by solving the continuity equation via suggesting a mathematical sample. The results enable us to disputes high injection effect at which tacks place when a high concentration of minority carrier -comparable to majority carriers- is appeared in thin area beside the depletion region.