A Novel X-ray Diffraction and Reflectivity Tool for Front-End of Line Metrology

摘要

High-resolution X-ray diffraction (HRXRD) is an established technique for the characterization and metrology of epitaxial thin-films. However, its use by the silicon semiconductor industry has been limited due to the stringent reliability, spot-size and throughput requirements for in-line measurement of product wafers. We have developed a new X-ray metrology tool (called the JVX 7200) that meets these demands. The tool features a novel HRXRD channel that provides composition, relaxation and thickness information for SiGe and Si:C epitaxial films. It also combines an enhanced X-ray reflectivity (XRR) channel to provide complementary thickness, density and roughness information on SiGe as well as other front-end of line (FEOL) films, such as those found in high-k gate/metal gate (HKMG) stacks. We describe the principles and capabilities of both the HRXRD and XRR channels and provide a comparison with conventional X-ray systems. Representative data are presented to highlight the capabilities of the new tool.