Nano-Al_2O_3 film prepared on porous silicon by sol-gel method

摘要

We report the structural and optical properties of a-Al_2O_3 film grown on porous silicon substrate using sol-gel method. The results indicated that a-Al_2O_3 film were grown after it sintering at 1200°C for 1 hour and the scanning electron microscopy image shows the a-Al_2O_3 film has a nanostructure. From the photoluminescence spectrum, it shows that a narrow purple emission peak. This proved porous silicon is a good substrate to grow a-Al_2O_3 film.