Preparation of Y_4MgSi_3O_(13):Tb~(3+),Ce~(3+) Green Emitting Phosphor for White Light Emitting Diodes and Its Luminescence Study

摘要

The Y_4MgSi_3O_(13):Tb~(3+),Ce~(3+) green phosphors are synthesized by sol-gel method, the preparation temperature, reduction atmosphere and luminescence characteristics of Y_4MgSi_3O_(13) doped with single Ce~(3+) ions and Ce~(3+),Tb~(3+) ions have been studied. The excitation and emission spectra of phosphors is determined by fluorescence spectrophotometer. The results show that: luminous intensity of Y_4MgSi_3O_(13):Tb~(3+),Ce~(3+) phosphors increased after doped with Ce~(3+) ions and the optimal doping concentration of Ce~(3+) is 0.04. Y_(3.94)MgSi_3O_(13): 0.02Tb~(3+),0.04Ce~(3+)green phosphor has the best luminescence characteristics under reduction atmosphere(H2:N2=l:3) at 1000°C, the phosphor gives intense green emission at 550nm originating from the ~5D_4->~7F_5 transition of Tb~(3+) ions.