A new fault protection circuit of 600V PT-IGBT for the improved avalanche energy employing the floating p-well

摘要

A fault protection circuit, which detects over-voltage under short circuit fault, of IGBT for the improved undamped inductive switching (UIS) capability using floating p-well is proposed and fabricated. Experimental results show that the proposed circuit successfully exhibits the reduction of collector current under fault condition when the protection circuit detects the fault signal and immediately lowers gate voltage. We have also verified the operation of the proposed circuit and device by employing the measurement under hard switching fault (HSF) and fault under load (FUL) conditions and two-dimensional mixed-mode simulation.