Properties of Organic Light Emitting Device With ZnO Anode Buffer Layer

摘要

Organic light emitting devices with the structure of ITO/ZnO/TPD/Alq_3/Al were prepared by vacuum thermal evaporation method. By establishing multi-layer structure model, the photoelectric properties of the devices with different thickness ZnO anode buffer layers were discussed, the relationship of current density and luminous efficiency with work voltage was found and the comparison analysis with CuPc devices were carried out as well. The results showed that ZnO as the stable dipole layer between ITO and TPD can reduce the potential barrier for holes injection, promote the compound of electrons and holes, when ZnO thickness was 3 nm, the devices had minimum potential barrier and best luminous efficiency, the brightness increased nearly three times than traditional CuPc devices.