首页> 外文会议>EOS conference on manufacturing of optical components >Laser-induced front side and back side etching of fused silica with KrF and XeF excimer lasers using metallic absorber layers: A comparison
【24h】

Laser-induced front side and back side etching of fused silica with KrF and XeF excimer lasers using metallic absorber layers: A comparison

机译:使用金属吸收层的激光诱导的前侧和背面蚀刻熔融二氧化硅和XEF准分子激光器:比较

获取原文

摘要

Laser-induced front side and back side etching is a method for nanometer-precision laser etching of transparent materials by using thin absorber layers. For fluences up to 5 J/cm2, the chromium metal layer-induced back side and front side etching results in equal surface morphologies and etching depths at certain parameters.
机译:激光诱导的前侧和后侧蚀刻是通过使用薄吸收层的纳米精度激光蚀刻透明材料的方法。对于高达5J / cm2的流量,铬金属层引起的背面和前侧蚀刻导致在某些参数下的等于表面形态和蚀刻深度。

著录项

相似文献

  • 外文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号