4H-SiC-DIMOSFET power device for home appliances

摘要

The 5x4.2 mm2 chip of the SiC DIMOSFET was fabricated and tested. The drain-source avalanche breakdown voltage without any gate bias (Vgs=OV) is measured to be >1000V. The drain current (Id)>40A is observe under the conditions of Vds=1V and Vgs=+20V.Typical Ron and specific Ron are measured to be 22 mil and 3.5 mΩcm2 with V_(ht)=2.3V. The SiC.DIMOSFET is introduced into the PE circuits of the commercially available all-metal IH cooktop to test the loss-energy saving. On the PFC circuit, 2/3 reduction of the energy loss of the SW device is confirmed. On the inverter - circuit, 21W reduction of the energy loss of the SW device is confirmed.