Photon-timing jitter dependence on the injection position in Single-Photon Avalanche Diodes

摘要

In recent years a growing number of applications demands always better timing resolution for Single Photon Avalanche Diodes. The challenge is pursuing the improved timing resolution without impairing the other device characteristics such as quantum efficiency and dark counts. This task requires a clear understanding of the physical mechanisms necessary to drive the device engineering process. Past studies state that in Si-SPADs the avalanche injection position statistics is the main contribution to the photon-timing jitter. However, in recent re-engineered devices, this assumption is questioned. For the purpose of assessing for good this contribution we developed an experimental setup in order to characterize the photontiming jitter as a function of the injection position by means of TCSPC measurements with a laser focused on the device active area. Results confirmed not only that the injection position is not the main contribution to the photon-timing jitter but also evidenced a radial dependence never observed before. Furthermore we found a relation between the photon–timing jitter and the specific resistance of the devices. To characterize the resistances we studied the avalanche current density distribution in the device active area by imaging the photoluminescence due to hot-carrier emission.