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Large-area patterned magnetic nanostructures by self-assembling of polystyrene nanospheres

机译:通过聚苯乙烯纳米球的自组装大面积图案磁性纳米结构

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In this work, dot and anti-dot structures in Co, Ni, Ni_(80)Fe_(20), Fe_(50)Pd_(50), Fe_(73.5)Cu_1Nb_3Si_(13.5)B_9 and Fe_(78)B_(13)Si_9 thin films have been produced by means of nanosphere lithography Two multi-step processes have been followed and will be here described. The first one directly exploits polystyrene nanosheres (PN) as a mask to fabricate arrays of magnetic nanoholes and dots. In the second case, the nanospheres are used to design a polymeric mask of a photoresist subsequently used to pattern a magnetic nanostructure on a film. Advantages and disadvantages of the two lithographical techniques will be here highlighted. In both processes, the dimension and mutual distance of the patterns are dependent on the starting PN diameter (in the interval 500-800 nm). Samples microstructure has been studied by means of SEM and AFM microscopy Room-temperature hysteresis loops have been measured by an AGFM (Alternating Gradient Field Magnetometer) MFM microscopy has been exploited to study the magnetic domain pattern. All produced systems have been observed to display tunable microstructure and, consequently, various magnetic properties for application.
机译:在本工作中,DOT和抗点结构在CO,NI,NI_(80)FE_(20),FE_(50)PD_(50),FE_(73.5)CU_1NB_3SI_(13.5)B_9和FE_(78)B_(13 )Si_9薄膜已经通过纳米圈光刻制备了两种多步骤,并将在此描述。第一个直接利用聚苯乙烯纳米粉(PN)作为掩模以制造磁性纳米孔和点阵列。在第二种情况下,纳米球用于设计随后用于在薄膜上进行磁性纳米结构的光致抗蚀剂的聚合物掩模。这两个光刻技术的优点和缺点将突出显示。在两个过程中,图案的尺寸和相互距离取决于起始PN直径(间隔500-800nm)。通过SEM和AFM显微镜室温磁滞回路已经研究了样品微观结构已经通过AGFM(交替梯度场磁力计)MFM显微镜被利用以研究磁畴图案来测量。已经观察到所有产生的系统显示可调谐微观结构,从而进行各种磁性的应用。

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