Nanometer ballistic MOSFET'S: Modeling, simulation and applications of digital circuits

摘要

An accurate new and simple numeral modeling of nano-scale dual gate n- MOSFET device in the ballistic region is presented. The model and the analysis is performed with channel length below 20 nm where electron transport is predominantly ballistic. In this paper a new developed modeling approach based on Boltzmann transport equation and Poisson equation in an n-channel nanoscale double-gate MOSFET is provided. The implications of ballistic transport to modeling a nanoscale MOSFET based on moment-based macroscopic transport models are discussed. The results show that the decrease in channel length toward 20nm and below increases the device performance. As it depends on the oxide thickness and the channel doping these characteristics make DG.MOSFET potentially suitable for logic- and digital circuits. The model has been implemented in the circuit simulation techniques such as Ring oscillators, CMOS inverters and other low power digital circuits.