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BEAM LIFETIME STUDIES OF HEFEI ADVANCED LIGHT SOURCE (HALS) STORAGE RING

机译:合肥先进光源(HALS)储存环的光束寿命研究

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Hefei Advanced Light Source (HALS) will be a high brightness light source with about 0.2nmrad emittance at 1.5GeV. Ultra low beam emittance and relatively low beam energy of HALS would result in poor beam lifetime. Comparing the beam-gas scattering and Touschek scattering effects, a conclusion can be drawn that Beam lifetime will be affected strongly by Touschek scattering. Touschek lifetime has been studied considering linear and nonlinear effects for the lattice structure. Relations between lifetime and RF cavity voltage, lifetime and emittance coupling, lifetime and gap heights of insertion devices have been calculated respectively. After the optimization, proper cavity voltage and emittance coupling are chosen to get about 1.06 hours of total lifetime including gas scattering losses effect. Installing a third harmonic RF cavity can lengthen the beam bunch to increase the total lifetime to about 3.85 hours. Top up injection operation will be applied to keep bunch current within the required value.
机译:合肥先进光源(HALS)将是一个高亮度光源,在1.5GeV时具有约0.2nmrad的射精。 HALLS的超低光束发射率和相对低光束能量会导致光束寿命不佳。比较光束 - 气散射和Touschek散射效果,可以绘制一个结论,即光束寿命将受到Touschek散射强烈影响的。考虑到晶格结构的线性和非线性效果研究了Touschek寿命。已经分别计算了寿命和RF腔电压,寿命和发射率耦合,寿命和间隙高度之间的关系已经计算了插入装置的寿命和间隙高度。在优化之后,选择适当的腔电压和可发射耦合以获得大约1.06小时的总寿命,包括气体散射损失效应。安装三次谐波RF腔可以延长光束束,以将总寿命增加到约3.85小时。将应用顶部注入操作将保持在所需值中保持束电流。

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