The Dwell Time of Electron Tunneling Through a Double Barrier in the Presence of Rashba SOI

摘要

Some aspects related to the influence of the Rashba spin‐orbit interaction (SOI) on the dwell time spent by the electrons in an asymmetric double barrier are analyzed. It is revealed that in the presence of the Rashba SOI, a difference between the dwell times associated to the spin‐up and spin‐down species can be obtained. This opens the way to a spin filtration in the time domain.