首页> 外文会议>Smart Systems Integration Conference >A 12-bit SAR ADC in 180 nm Technology for Smart Sensor Systems
【24h】

A 12-bit SAR ADC in 180 nm Technology for Smart Sensor Systems

机译:一个12位SAR ADC在180 NM技术中进行智能传感器系统

获取原文

摘要

High-level models serve their purpose for a time- and memory-efficient abstraction of the implementation and functionality of integrated circuits, but often experience high distinction between the transistor-level simulation and measurements. A 12-bit SAR ADC is designed as a high-level model as well as a transistor-level implementation in a 0.18 μm technology for smart sensor system applications. An accurate high-level model is developed and compared to actual transistor-level simulations as well as measurement results of the manufactured chip. Crucial design steps are shown to accurately design the high-level model and achieve a model that closely follows the behavior of the manufactured circuit, which can be used to highly accelerate the design process of smart sensor systems
机译:高级模型为集成电路的实现和功能的时间和内存有效的抽象提供了起作用的目的,但通常在晶体管级模拟和测量之间进行高区别。 12位SAR ADC设计为高级模型以及0.18μm技术的晶体管电平实现,用于智能传感器系统应用。 开发精确的高级模型,并与实际晶体管级模拟以及制造芯片的测量结果相比。 明确的设计步骤被证明可以精确地设计高级模型,并实现了一个密切遵循制造电路行为的模型,可用于高度加速智能传感器系统的设计过程

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号