Electron tomography and high-resolution transmission electron microscopy were used to characterize the unique three-dimensional structures of helical or zigzagged GaN, ZnGa_2O_4 and Zn_2SnO_4 nanowires. The helical GaN nanowires adopt a helical structure that consists of six equivalent <0-111> growth directions with the axial [0001] direction. The ZnGa_2O_4 nanosprings have four equivalent <011> growth directions with the [001] axial direction. The zigzagged Zn_2SnO_4 nanowires consisted of linked rhombohedrons structure having the side edges matched to the <011> direction, and the [111] axial direction.
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