Poly(3-hexylthiophene) based Organic field-effect transistor as NO_2gas sensor

摘要

A bottom contact organic field effect transistor (OFET) was fabricated with poly(3-hexylthiophene) (P3HT) as thechannel semiconductor. P3HT thin film was deposited onto a SiO_2/n-Si substrate by spin coating and electricalcharacteristics of the P3HT-FET were investigated in a nitrogen flux. A change in the saturation drain-source current(Ins) was observed when device was exposed to different concentrations of nitrogen dioxide (NO_2) gas. It was found thatthe variation in the I_(DS)was remarkable with NO_