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Photoresponse in tilted Bi_2Sr_2Co_2O_y thin films with nano-structured silver layer as the light absorber

机译:光孔倾斜的Bi_2SR_2CO_2O_Y薄膜,纳米结构银层作为光吸收器

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Layered cobalt oxide thin films with tilted structures exhibit large light-induced transverse voltage signals due to the transverse thermoelectric effect and have great potential applications in uncooled broad-band light detectors. In this paper, we investigated the photoresponse in c-axis tilted Bi_2Sr_2Co_2O_y thin films coated with a layer of nano-structured silver light absorber by using a 532 nm continuous wave laser as the incident light. The incidence direction of the laser beam was directly perpendicular to the sample surface. The laser spot was located at the centre position between the two electrodes and its diameter was about 2 mm. The induced lateral voltage signals were recorded using a 2400 Keithley source meter. Open-circuit voltage signals were observed when the sample surface was illuminated by the 532 nm radiation. Appropriate lateral size and thickness of the nano-structured silver layer can increase the photo-thermal-electric conversion efficiency in this photoresponse process due to the effective absorption of the light at the absorption layer, leading to the improvement in voltage sensitivity. The result offers important guidance of designing the light absorption layer for high performance broad-band light detectors based on the light-induced transverse voltage effect.
机译:由于横向热电效应,具有倾斜结构的层状钴氧化物薄膜具有大的光引起的横向电压信号,并且在未冷却的宽带光检测器中具有很大的潜在应用。在本文中,我们通过使用532nm连续波激光作为入射光,研究了涂有一层纳米结构银光吸收器层的C轴倾斜的Bi_2SR_2CO_2O_Y薄膜的光响应。激光束的发生方向直接垂直于样品表面。激光点位于两个电极之间的中心位置,其直径为约2mm。使用2400 keithley源仪记录感应横向电压信号。当样品表面被532nm辐射照射时,观察到开路电压信号。纳米结构银层的适当横向尺寸和厚度可以由于吸收层的有效吸收而导致该光孔过程中的光热转换效率,导致电压灵敏度的提高。该结果基于光引起的横向电压效应,提供了设计高性能宽带光检测器的光吸收层的重要指导。

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