Luminescent Properties of CdSe Quantum Dots Subjected to MBE GaN Growth Temperatures

摘要

CdSe semiconductor quantum dots have received an enormous amount of attention due to their intense luminescent properties in the middle of the visible spectrum, By attempting to emulate the quantum confinement properties of the successful GaN/InGaN blue light emitting diode (LED), an efficient inorganic LED in the deep green spectral region could theoretically be achieved by incorporating CdSe quantum dots within the active region. The semiconductor growth process would expose the quantum dots to temperatures at a minimum of 600°C. This paper reports on a series of anneal experiments to determine the luminescent properties of colloidal CdSe quantum dots on GaN that were annealed at 350°C and 620°C. The experiment took place in a MBE chamber under high vacuum loaded with quantum dot samples to simulate the environment to simulate the environment of epitaxial growth. We report on the quantum dots subsequent luminescence and a resulting blue shift in peak emission.